Datasheet Details
| Part number | IRF7601 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 116.88 KB |
| Description | Power MOSFET |
| Datasheet | IRF7601_InternationalRectifier.pdf |
|
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Overview: PD - 9.1261D IRF7601 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S S S G 1 2 8 7 A A D D D D VDSS = 20V RDS(on) = 0.
| Part number | IRF7601 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 116.88 KB |
| Description | Power MOSFET |
| Datasheet | IRF7601_InternationalRectifier.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.
| Part Number | Description |
|---|---|
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