Datasheet Summary
- 9.1263E
HEXFET® Power MOSFET l l l l l l l
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
A D D D D
VDSS = -20V RDS(on) = 0.09Ω
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of...