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IRF7701GPBF - Power MOSFET

General Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Key Features

  • to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96146A IRF7701GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS -12V RDS(on) max 0.011@VGS = -4.5V 0.015@VGS = -2.5V 0.022@VGS = -1.8V ID -10A -8.5A -7.0A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner 9 ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 B with an extremely efficient and reliable device for use in battery and load management.