Datasheet Summary
- 93894A
HEXFET® Power MOSFET l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel
VDSS
-20V
RDS(on) max
0.015@VGS = -4.5V 0.024@VGS = -2.5V
-8.6A -7.3A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design , that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G
8 7
8= 7= 6= 5= D S S D
5 signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8...