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PD - 93849C PROVISIONAL
IRF7702
HEXFET® Power MOSFET RDS(on) max
0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V
l l l l l l
Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel
VDSS
-12V
ID
-8.0A -7.0A -5.8A
1
D
8 7
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
2 3 4 1= 2= 3= 4= D S S G
G
6
S
8= 7= 6= 5= D S S D
5
with an extremely efficient and reliable device for battery and load management.
IRF7702 Datasheet
