IRF7702 Overview
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 2 3 4 1= 2= 3= 4= D S S G G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device for battery and load management.
