Datasheet Details
| Part number | IRF7702PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 182.29 KB |
| Description | Power MOSFET |
| Datasheet | IRF7702PbF-InternationalRectifier.pdf |
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Overview: l Ultra Low On-Resistance l -1.8V Rated l P-Channel MOSFET l Very Small SOIC Package l Low Profile ( < 1.1mm) l Available in Tape & Reel l Lead-Free PD-96027 IRF7702PbF VDSS -12V HEXFET® Power MOSFET RDS(on) max 0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V ID -8.0A -7.0A -5.
| Part number | IRF7702PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 182.29 KB |
| Description | Power MOSFET |
| Datasheet | IRF7702PbF-InternationalRectifier.pdf |
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HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
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