IRF7707PbF
IRF7707PbF is Power MOSFET manufactured by International Rectifier.
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
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Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
VGS TJ , TSTG
Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation- Maximum Power Dissipation- Linear Derating Factor
Gate-to-Source Voltage Junction and Storage Temperature Range
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TSSOP-8
Max. -20 -7.0 -5.7 -28 1.5 1.0 0.01 ±12 -55 to +150
Units V
W W W/°C V °C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient-
.irf.
Max. 83
Units °C/W
05/14/09
IRF7707Pb F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)...
