Datasheet4U Logo Datasheet4U.com

IRF7703GPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

General Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- 9 B T 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 ' & % $ signer with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8.

Overview

PD- 96148A IRF7703GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free !

" # HEXFET® Power MOSFET VDSS -40V RDS(on) max (mW) 28@VGS = -10V 45@VGS = -4.5V ID -6.0A -4.

Key Features

  • signed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRF7703 Power MOSFET
IRF7700 Power MOSFET
IRF7700GPBF Power MOSFET
IRF7701 Power MOSFET
IRF7701GPBF Power MOSFET
IRF7702 Power MOSFET
IRF7702PbF Power MOSFET
IRF7704 Power MOSFET
IRF7704GPBF Power MOSFET
IRF7704PbF Power MOSFET