IRF7703GPBF Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides the de- 9 B T 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 ' & % $ signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has...