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IRF7704PbF - Power MOSFET

General Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • 7903 Visit us at www. irf. com for sales contact information. 05/2009 www. irf. com 9.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.1mm) l Available in Tape & Reel l Lead-Free VDSS -40V PD- 96025A IRF7704PbF HEXFET® Power MOSFET RDS(on) max (mW) 46@VGS = -10V 74@VGS = -4.5V ID -4.6A -3.7A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.