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IRF7726PBF - HEXFET Power MOSFET

Datasheet Summary

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • W A B C D WW = (27-52) IF.

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Full PDF Text Transcription

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PD -95992 IRF7726PbF l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free HEXFET® Power MOSFET VDSS -30V RDS(on) max 0.026@VGS = -10V 0.040@VGS = -4.5V ID -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.
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