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IRF7748L1TRPbF - Power MOSFET

Description

The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • 00 TJ = 175°C ISD, Reverse Drain Current (A) 10 TJ = 25°C 1 0.1 0.2 VGS = 0V 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1.4 ID, Drain-to-Source Current (A) 10000 1000 100 IRF7748L1TRPbF.

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Full PDF Text Transcription

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IRF7748L1TRPbF Applications RoHS Compliant, Halogen Free  Lead-Free (Qualified up to 260°C Reflow)  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Industrial Qualified DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS 60V min VGS ±20V max RDS(on) 1.7m@ 10V Qg tot Qgd Vgs(th) 146nC 40nC 2.
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