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IRF7755GPBF - Power MOSFET

General Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Full PDF Text Transcription for IRF7755GPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7755GPBF. For precise diagrams, and layout, please refer to the original PDF.

PD- 96150A IRF7755GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & ...

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FET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -20V RDS(on) max 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V ID -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner ' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% l

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