Description
The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1000
100 100µsec DC 10 1msec
10
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C Tj = 175°C Single Pulse 0 1
10msec
0.1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
VGS(th) , Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 1.0A ID = 1.0mA ID = 250µA
160
ID, Drain Current (A)
120.
IRF7759L2TR1PBF Datasheet
