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IRF7759L2TRPBF - Power MOSFET

Description

The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1000 100 100µsec DC 10 1msec 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 Tc = 25°C Tj = 175°C Single Pulse 0 1 10msec 0.1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 1.0A ID = 1.0mA ID = 250µA 160 ID, Drain Current (A) 120.

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Full PDF Text Transcription

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PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS VGS ±20V max RDS(on) 1.8mΩ@ 10V 75V min Qg tot Qgd 62nC Vgs(th) 3.
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