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IRF7799L2PBF - Power MOSFET

Description

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • Source Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF7799L2PbF ISD, Reverse Drain Current (A) 1000 100 10 TJ = 175°C TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 ID, Drain-to-Source Current (A) 1000 100.

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IRF7799L2PbF l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques l Industrial Qualified Applicable DirectFET Outline and Substrate Outline  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS 250V min ± 30V max Qg tot Qgd 110nC 39nC RDS(on) 32mΩ@ 10V Vgs(th) 4.
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