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IRF7799L2TRPBF - Power MOSFET

Description

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • = 175°C Single Pulse 10msec 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage (V) 1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 VGS(th) , Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 ID, Drain Current (A) 30 5.0 4.0 20 3.0 ID = 250µA 2.0 ID = 1.0mA ID = 1.0A 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ).

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Full PDF Text Transcription

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PD - 96266 IRF7799L2TRPbF IRF7799L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS Qg tot VGS Qgd 39nC RDS(on) 32mΩ@ 10V 250V min ± 30V max 110nC Vgs(th) 4.
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