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IRF7807V - N-Channel Power MOSFET

General Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

Overview

PD-94108 IRF7807V • • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D.