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IRF7807VD1PBF-1 - Power MOSFET

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Overview

VDS RDS(on) max (@VGS = 4.5V) Qg (typical) QSW (typical) QOSS (typical) ID (@TA = 25°C) 30 V 25 mΩ 9.5 nC 3.4 nC 12 nC 8.

Key Features

  • Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7807VD1PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7807VD1PbF-1 IRF7807VD1TRPbF-1 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Ga.

More Datasheets from International Rectifier (now Infineon)

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IRF7807V N-Channel Power MOSFET
IRF7807VPBF Power MOSFET
IRF7807VTRPBF-1 Power MOSFET
IRF7807 N-Channel Power MOSFET
IRF7807A N-Channel Power MOSFET
IRF7807APbF HEXFET Chip-Set for DC-DC Converters