IRF7811APBF Description
1 1/11/05 IRF7811APbF Static @ TJ = 25°C (unless otherwise specified) Symbol BV DSS ∆Β V DSS/∆ T J RDS(on) VGS(th) ∆ V GS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current...
IRF7811APBF Key Features
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
- 100% RG Tested
- Lead-Free
- S S HEXFET® Power MOSFET VDSS 28V RDS(on) max 12mΩ Qg 17nC 1 8 7 A A D D D D 2 Benefits
- S G 3 6 Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Cur