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IRF7811APBF - HEXFET Power MOSFET

Features

  • ss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 a.

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www.DataSheet4U.com PD - 95264A IRF7811APbF Applications High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l 100% RG Tested l Lead-Free l S S HEXFET® Power MOSFET VDSS 28V RDS(on) max 12mΩ Qg 17nC 1 8 7 A A D D D D 2 Benefits l l l S G 3 6 Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 4 5 Top View SO-8 Absolute Maximum Ratings Symbol ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation f f c f 9.1 f 11 91 2.5 1.6 0.
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