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IRF7811AVPbF - N-Channel Application-Specific MOSFETs

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

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Datasheet preview – IRF7811AVPbF

Datasheet Details

Part number IRF7811AVPbF
Manufacturer International Rectifier
File Size 107.54 KB
Description N-Channel Application-Specific MOSFETs
Datasheet download datasheet IRF7811AVPbF Datasheet
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Full PDF Text Transcription

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IRF7811APVD-P95b26F5 IRF7811AVPbF • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
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