IRF7811W Datasheet | International Rectifier

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. SO-8 T o p V ie w DEVICE CHARACTERISTICS… IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18n C 5.5n C 12n C Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient- Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 90°C IDM PD Symbol VDS VGS ID IRF7811W 30 ±12 14 13 109 3.1 3.0 - 55 to 150 3.8 109 °C A W A Units V 3/13/01 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss - - - (off) Min 30 Typ - 9.0 Max - 12 Units V mΩ V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 15A‚ VDS = VGS,I D = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C VGS = ±12V VGS=5.0V, ID=15A, VDS=16V VGS = 5V, VDS< 100m V VDS = 16V, ID = 15A Current- µA n A Gate-Source Leakage Current Total Gate Chg Cont...