Datasheet4U Logo Datasheet4U.com

IRF7821 - Power MOSFET

Features

  • Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Ploss = (Irms × Rds(on ) ) 2  .

📥 Download Datasheet

Datasheet preview – IRF7821

📁 Similar Datasheet

  • IRF7805PBF - Power MOSFET (Infineon)
  • IRF7805TRPbF-1 - Power MOSFET (Infineon)
  • IRF7832 - N-Channel 30-V (D-S) MOSFET (Freescale)
  • IRF7855 - N-Channel MOSFET (Kexin)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 94579B IRF7821 HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current VDSS 30V RDS(on) max 9.1mW@VGS= 10V Qg(typ.) 9.3nC S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 ± 20 13.6 11 100 2.5 1.6 0.
Published: |