IRF7855PBF
IRF7855PBF is HEXFET Power MOSFET manufactured by International Rectifier.
- 97173
IRF7855Pb F
Applications l Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters l Secondary Side Synchronous Rectification Switch for 15Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
60V
RDS(on) max
9.4m:@VGS = 10V
12A
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
Max.
60 ± 20 12 8.7 97 2.5 0.02 9.9 -55 to + 150
Units
V A c e
W W/°C V/ns °C h
Storage Temperature Range
Thermal Resistance
Parameter
RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
20 50
Units
°C/W ei
- -
- -
- -
Notes through are on page...