IRF7855 Datasheet | Kexin Semiconductor

Features - VDS (V) = 60V - ID = 12 A (VGS = 10V) - RDS(ON) ＜ 9.4mΩ (VGS = 10V) 1 2 3 4 SOP-8 AA 8D 7D 6D 5D +0.040.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Avalanche Current Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ Symbol VDS VGS IDM PD IAS EAS dv/dt Rth JA Rth JC TJ Tstg Rating 60 ±20 12 8.7 97 2.5 0.02 7.2 540 9.9 50 20 150 -55 to 150 Unit V W W/℃ A m J V/ns ℃/W ℃ .kexin..cn 1 SMD Type MOSFET N-Channel MOSFET IRF7855 (KRF7855) - Electrical Characteristics Ta = 25℃ Parameter Drain-Source...