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PD - 94573
SMPS MOSFET
Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ
l
HEXFET® Power MOSFET
IRF8010S IRF8010L
ID
80A 15mΩ
VDSS
100V
RDS(on) max
D2Pak IRF8010S
TO-262 IRF8010L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
80 57 320 260 1.