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IRF8010PBF - HEXFET Power MOSFET

Key Features

  • h ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. … Coss eff. is a fixed capacitance that gives the same charging time ‚ Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, as Coss while VDS is rising from 0 to 80% VDSS. IAS = 45A. † Calculated continuous current based on maximum allowable.
  • ISD ≤ 45A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, junction temperature. Package limitation current is 75A. TJ ≤ 175°C. TO-220 package is not recommended for Surface Mount.

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www.DataSheet4U.com PD - 95505 Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free SMPS MOSFET IRF8010PbF HEXFET® Power MOSFET VDSS 100V RDS(on) max 15mΩ ID 80A† Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Max. 80 57 320 260 1.