IRF8734PBF
..
- 96226
IRF8734Pb F
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free
VDSS
RDS(on) max Qg (typ.) 30V 3.5m @VGS = 10V 20n C
:
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Power Dissipation Pulsed Drain Current
Max.
30 ± 20 21 17 168 2.5 1.6 0.02 -55 to + 150
Units
V f Power Dissipation f c
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient f g
Typ.
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