IRF8736PBF
..
- 97120
IRF8736Pb F
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead -Free
VDSS
RDS(on) max Qg Typ. 30V 4.8m @VGS = 10V 17n C
:
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 ± 20 18 14.4 144 2.5 1.6 0.02 -55 to + 150
Units
V f f c
A W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RθJL RθJA g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
- -
- -
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