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IRF8910 Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview

PD - 95868 IRF8910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Benefits l Very Low RDS(on) at 4.

Key Features

  • d off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain vol.