IRF8910PBF Overview
20 ± 20 10 8.3 82 2.0 1.3 0.016 -55 to + 150 Units V c A W W/°C °C Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. 20 62.5 Units °C/W fg Notes through are on page 10 .irf. 1 8/11/04 IRF8910PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source...
IRF8910PBF Key Features
- Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
- Very Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance
- Fully Characterized Avalanche Voltage and Current