Datasheet4U Logo Datasheet4U.com

IRF9393 - Power MOSFET

This page provides the datasheet information for the IRF9393, a member of the IRF9393PbF Power MOSFET family.

Datasheet Summary

Features

  • Features 25V VGS max Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Direct Drive at High VGS Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9393PbF IRF9393TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Sour.

📥 Download Datasheet

Datasheet preview – IRF9393

📁 Similar Datasheet

  • IRF9358 - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9358PbF - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9388PbF - Power MOSFET (Infineon)
  • IRF9130 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9130 - P-Channel Power MOSFET (Seme LAB)
  • IRF9130 - P-Channel Power MOSFET (Intersil Corporation)
  • IRF9130SMD - P-Channel Power MOSFET (Seme LAB)
  • IRF9131 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9132 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9133 - P-Channel Power MOSFET (Samsung semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 V ±25 V S1 S2 19.4 mΩ S3 -9.
Published: |