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IRF9395MPBF - HEXFET Power MOSFET

Datasheet Summary

Description

The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT D S S S S D MC MP MC DirectFET ™.

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Full PDF Text Transcription

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PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS Applications l Isolation Switch for Input Power or Battery Application VGS Qgd 15nC RDS(on) Qoss 23nC -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Qg tot 32nC Qrr 62nC Vgs(th) -1.8V Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.
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