Datasheet4U Logo Datasheet4U.com

IRF9Z30PBF - HEXFET POWER MOSFET

Description

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Features

  • P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET® POWER MOSFET Product Summary Part Number IRF9Z30PbF VDS(V) -50 D RDSON (Ω) 0.14 ID (A) -18 G.

📥 Download Datasheet

Datasheet preview – IRF9Z30PBF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 96095 IRF9Z30PbF Features P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET® POWER MOSFET Product Summary Part Number IRF9Z30PbF VDS(V) -50 D RDSON (Ω) 0.14 ID (A) -18 G Description S TO-220AB www.DataSheet4U.com The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation.
Published: |