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IRF9Z30PBF - HEXFET POWER MOSFET

General Description

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Key Features

  • P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET® POWER MOSFET Product Summary Part Number IRF9Z30PbF VDS(V) -50 D RDSON (Ω) 0.14 ID (A) -18 G.

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📁 Similar Datasheet

Part Number Description Manufacturer
IRF9Z30 Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF9Z34 Power MOSFET
IRF9Z34L Power MOSFET
IRF9Z34LPBF Surface Mount
IRF9Z34N Power MOSFET
IRF9Z34NL Power MOSFET
IRF9Z34NLPBF MOSFET
IRF9Z34NPbF Power MOSFET
IRF9Z34NS Power MOSFET
IRF9Z34NSPBF MOSFET
IRF9Z34S Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 96095 IRF9Z30PbF Features P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET® POWER MOSFET Product Summary Part Number IRF9Z30PbF VDS(V) -50 D RDSON (Ω) 0.14 ID (A) -18 G Description S TO-220AB www.DataSheet4U.com The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation.