Datasheet Details
| Part number | IRFAE50 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 846.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 IRFAE50 Datasheet
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General Description
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.
Key Features
- Repetitive Avalanche Ratings.
- Dynamic dv/dt Rating.
- Hermetically Sealed.
- Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche En.