IRFB16N50K Description
310 17 28 Units mJ A mJ Parameter RθJC RθCS Junction-to-Case Case-to-Sink, Flat, Greased Surface RθJA Junction-to-Ambient .irf. 0.44 62 Units °C/W 1 03/11/04 IRFB16N50K Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFB16N50K Key Features
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low RDS(on)