IRFB16N50K Description
IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 89 27 43 Single 0.285 D TO-220 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free.
IRFB16N50K Key Features
- Low Gate Charge Qg Results in Simple Drive
- Improved Gate, Avalanche and Dynamic dV/dt
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low RDS(on)
- Lead (Pb)-free Available