IRFB38N20D Datasheet | International Rectifier

- 94358 SMPS MOSFET IRFB38N20D IRFS38N20D IRFSL38N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.054Ω 44A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB IRFB38N20D D2Pak IRFS38N20D TO-262 IRFSL38N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 44 32 180 3.8 320 2.1 ± 30 9.5 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ‡ Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ are on page 11 Typ. - - - 0.50 - - - - - - Max. - - - 62 40 Units °C/W .irf....