IRFB42N20D - Power MOSFET

Datasheet Summary

Features

temperature.
ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1.45mH RG = 25Ω, IAS = 26A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HE.

International Rectifier

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Datasheet Details

Part number	IRFB42N20D
Manufacturer	International Rectifier
File Size	215.15 KB
Description	Power MOSFET
Datasheet	IRFB42N20D Datasheet
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PD- 94208 SMPS MOSFET IRFB42N20D HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: Dec 10, 2005 |