Datasheet4U Logo Datasheet4U.com

IRFB42N20D - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤55mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB42N20D Power MOSFET International Rectifier
IRFB42N20DPBF HEXFET Power MOSFET International Rectifier
IRFB4212PbF Digital Audiio MOSFET International Rectifier
IRFB4215 Power MOSFET International Rectifier
IRFB4215PbF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFB4212 N-Channel MOSFET
IRFB4227 N-Channel MOSFET
IRFB4228 N-Channel MOSFET
IRFB4229 N-Channel MOSFET
IRFB4019 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRFB42N20D，IIRFB42N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤55mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·Uninterruptible Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 330 Tj Max.