IRFB42N20DPBF - HEXFET Power MOSFET

Datasheet Summary

Features

e width limited by max. junction temperature.
ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1.45mH RG = 25Ω, IAS = 26A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be fou.

International Rectifier

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Datasheet Details

Part number	IRFB42N20DPBF
Manufacturer	International Rectifier
File Size	168.93 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB42N20DPBF Datasheet
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SMPS MOSFET PD- 95470 IRFB42N20DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: May 30, 2007 |