IRFB42N20DPBF - HEXFET Power MOSFET

Product Overview

International Rectifier

Part number	IRFB42N20DPBF
Manufacturer	International Rectifier
File Size	168.93 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB42N20DPBF Datasheet
Additional preview pages of the IRFB42N20DPBF datasheet.

e width limited by max. junction temperature.
ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1.45mH RG = 25Ω, IAS = 26A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be fou.

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Published: May 30, 2007 |