IRFB4410 - HEXFET Power MOSFET

Features

e far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjma.

International Rectifier

Datasheet Details

Part number	IRFB4410
Manufacturer	International Rectifier
File Size	795.96 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB4410 Datasheet
Additional preview pages of the IRFB4410 datasheet.

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Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96902C IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET D VDSS 100V :RDS(on) typ. 8.0m :G max.

Published: May 30, 2007 |