IRFB4410ZGPbF Datasheet | International Rectifier

- 96213 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free l Halogen-Free IRFB4410ZGPb F HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID (Silicon Limited) 100V 7.2m: 9.0m: 97A G Gate DS G TO-220AB IRFB4410ZGPb F D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics d EAS (Thermally limited) Single Pulse Avalanche Energy Ù...