IRFB61N15D - Power MOSFET

Datasheet Summary

Features

max. junction temperature.
ISD ≤ 37A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 0.98mH RG = 25Ω, IAS = 37A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web sit.

International Rectifier

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Datasheet Details

Part number	IRFB61N15D
Manufacturer	International Rectifier
File Size	211.48 KB
Description	Power MOSFET
Datasheet	IRFB61N15D Datasheet
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PD- 94207 SMPS MOSFET IRFB61N15D HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V RDS(on) max 0.032Ω ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: Apr 16, 2005 |