IRFB61N15D - N-Channel MOSFET

Datasheet Summary

Features

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Static drain-source on-resistance: RDS(on) ≤32mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IRFB61N15D
Manufacturer	INCHANGE
File Size	240.93 KB
Description	N-Channel MOSFET
Datasheet	IRFB61N15D Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFB61N15D，IIRFB61N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤32mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·Uninterruptible Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 330 Tj Max.

Published: Oct 12, 2020 |