IRFB61N15DPBF - HEXFET Power MOSFET

Datasheet Summary

Features

e rating; pulse width limited by max. junction temperature.
ISD ≤ 37A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 0.98mH RG = 25Ω, IAS = 37A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standa.

International Rectifier

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Datasheet Details

Part number	IRFB61N15DPBF
Manufacturer	International Rectifier
File Size	169.84 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB61N15DPBF Datasheet
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PD- 95621 SMPS MOSFET IRFB61N15DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V RDS(on) max 0.032Ω ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: May 30, 2007 |