IRFB61N15DPBF Datasheet | International Rectifier

PD- 95621 SMPS MOSFET IRFB61N15DPb F HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V RDS(on) max 0.032Ω 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† TO-220AB Max. 60 42 250 2.4 330 2.2 ± 30 3.7 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Notes  Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient through … are on page 8 Typ. - - - 0.50 - - - Max. - - - 62 Units °C/W .irf. 8/2/04 IRFB61N15DPb F Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 -...