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IRFB7746PBF - Power MOSFET

Key Features

  • Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart = 25°C (Single Pulse) 100 Avalanche Current (A) 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) 1.0E-02 1.0E-01 Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle 100 ID = 35A 80 60 40 20 0 25 50 7.

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Full PDF Text Transcription (Reference)

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Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters StrongIRFET™ IRFB7746PbF HEXFET® Power MOSFET   D VDSS 75V RDS(on) typ. 9.0m G max 10.