IRFB7746 - N-Channel MOSFET

Features

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Static drain-source on-resistance: RDS(on) ≤10.6mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRFB7746
Manufacturer	Inchange Semiconductor
File Size	240.70 KB
Description	N-Channel MOSFET
Datasheet	IRFB7746 Datasheet
Additional preview pages of the IRFB7746 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFB7746，IIRFB7746 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 59 IDM Drain Current-Single Pulsed 219 PD Total Dissipation @TC=25℃ 99 Tj Max.

Published: Oct 12, 2020 |