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IRFB9N60 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Key Features

  • (.55 5) 1 3.47 (.53 0) 4 .0 6 (.160 ) 3 .5 5 (.140 ) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.0 14 ) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LIN G D IM E N S IO N : INC H 2.92 (.11 5) 2.64 (.10 4) 3 O U TL IN E C O N F O R MS TO J E D E C O U T L IN E TO -2 20 A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE.

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