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IRFB9N60A - Power MOSFET

Key Features

  • Low gate charge Qg results in simple drive requirement Available.
  • Improved gate, avalanche and dynamic dV/dt Available ruggedness.
  • Fully characterized capacitance and avalanche voltage and current.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com IRFB9N60A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single 0.75 FEATURES • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche and dynamic dV/dt Available ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.