IRFB9N60A
IRFB9N60A is Power MOSFET manufactured by Vishay.
FEATURES
- Low gate charge Qg results in simple drive requirement
Available
- Improved gate, avalanche and dynamic d V/dt Available ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- High speed power switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
- Active clamped forward
- Main switch
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRFB9N60APb F IRFB9N60APb F-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain currenta Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating junction and storage temperature range Soldering remendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 6.8 m H, Rg = 25 Ω, IAS = 9.2 A (see fig. 12) c. ISD ≤ 9.2 A, d I/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 600 ± 30 9.2 5.8 37 1.3 290 9.2 17 170 5.0
-55 to +150 300 10 1.1
UNIT...
