Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
Features
- (.55 5) 1 3.47 (.53 0)
4 .0 6 (.160 ) 3 .5 5 (.140 )
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M
3X
0.55 (.02 2) 0.46 (.01 8)
0.36 (.0 14 )
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LIN G D IM E N S IO N : INC H
2.92 (.11 5) 2.64 (.10 4)
3 O U TL IN E C O N F O R MS TO J E D E C O U T L IN E TO -2 20 A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE.
IRFB9N60A Datasheet
